Investigation of the effect of discharge plasma stabilization by a semiconductor

Journal de Physique III

Volumn 6, Issue 6, 1996, Pages 797-805

  Lebedeva, N N ^a   Orbukh, V I ^a   Salamov, B G ^a  

^a BAKU STATE UNIVERSITY   (Azerbaijan)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; DEPOSITION; ELECTRODES; METALLIC FILMS; OHMIC CONTACTS; PLASMA INTERACTIONS; PLASMA PROBES; PLASMA SHEATHS; PLASMAS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR PLASMAS;

GAS DISCHARGE; PLASMA SEMICONDUCTOR CONTACT; SEMICONDUCTING ELECTRODES; SOLID PLASMA INTERACTIONS; WALL EFFECTS;

PLASMA STABILITY;

EID: 0030172353     PISSN: 11554320     EISSN: None     Source Type: Journal    
DOI: 10.1051/jp3:1996155     Document Type: Article

References (11)

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