Quenched Si(111)-DAS (dimer-adatom-stacking fault) structures studied by scanning tunneling microscopy

Surface Science

Volumn 357-358, Issue , 1996, Pages 464-467

  Miyake, Koji ^a   Ishida, Masahiko ^a   Uchikawa, Michihiro ^a   Hata, Kenj ^a   Shigekawa, Hidemi ^a   Nannichi, Yasuo ^a   Yoshizaki, Ryozo ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Low index single crystal surfaces; Scanning tunneling microscopy; Semiconducting surfaces; Silicon; Surface structure, morphology, roughness, and topography

Indexed keywords

CHARGE TRANSFER; MORPHOLOGY; QUENCHING; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; STACKING FAULTS; SURFACE ROUGHNESS; SURFACES;

DIMER ADATOM STACKING FAULT; DIMERS; LOW INDEX SINGLE CRYSTAL SURFACES; PHASE BOUNDARY; SEMICONDUCTING SURFACES; SURFACE TOPOGRAPHY;

SURFACE STRUCTURE;

EID: 0030172164     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00202-6     Document Type: Article

References (6)

1. K. Takayanagi, Y. Tanishiro, M. Takahashi and S. Takahashi, J. Vac. Sci. Technol. A 3 (1985) 1502.
2. K. Miyake, H. Shigekawa and R. Yoshizaki, Appl. Phys. Lett. 66 (1995) 3468.
3. T. Hoshino, K. Kumamoto, K. Kokubun, T. Ishimaru and I. Ohdomari, Phys. Rev. B 51 (1995) 14594.
4. R.J. Hamers, R.M. Tromp and J.E. Demuth, Phys. Rev. Lett. 56 (1986) 1972.
5. Ph. Avouris and R. Wolkow, Phys. Rev. B 39 (1989) 5091.
6. Ph. Avouris, I.-W. Lyo and F. Bozso, J. Vac. Sci. Technol. B 9 (1991) 424.