Oxidation behavior of Si3N4 at low oxygen partial pressures

Zairyo/Journal of the Society of Materials Science, Japan

Volumn 45, Issue 6, 1996, Pages 694-698

  Nanri, Hayato ^a   Ishida, Shingo ^a   Takeuchi, Nobuyuki ^a   Watanabe, Koji ^b   Wakamatsu, Mitsuru ^b  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b Taiko Refractories Co Ltd   (Japan)

Author keywords

Mass spectrometer; O2 consumption; Oxidation; Si3N4

Indexed keywords

IMPURITIES; MASS SPECTROMETRY; OXIDATION; OXYGEN; PROTECTIVE COATINGS; YTTRIUM COMPOUNDS;

OXIDATION MECHANISM; OXYGEN CONSUMPTION; OXYGEN PARTIAL PRESSURE; QUADRUPOLE MASS SPECTROMETER;

SILICON NITRIDE;

EID: 0030171695     PISSN: 05145163     EISSN: None     Source Type: Journal    
DOI: 10.2472/jsms.45.694     Document Type: Article

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