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Volumn E79-C, Issue 6, 1996, Pages 845-852

Copper thick film conductor for aluminum nitride substrates

Author keywords

Aluminum nitride; Ceramics; Copper conductor; Hybrid 1c; Thick flm

Indexed keywords

ADHESION; ALUMINUM COMPOUNDS; CERAMIC MATERIALS; CONDUCTIVE FILMS; COPPER; OXIDATION; OXIDES; PHYSICAL PROPERTIES; PYROLYSIS; SOLDERING ALLOYS; SUBSTRATES; THICK FILM CIRCUITS;

EID: 0030171630     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (1)

References (10)
  • 2
    • 0021445669 scopus 로고
    • Thick film and direct bond copper forming technologies for aluminum nitride substrate
    • N. Iwase, K. Anzai, K. Shinozuka, O. Hirao, T. D. Thanh, and Y. Sugiura, "Thick film and direct bond copper forming technologies for aluminum nitride substrate," IEEE Trans. C. H. M. T., vol. CHMT-8, no. 2, pp. 253-258, 1985.
    • (1985) IEEE Trans. C. H. M. T. , vol.CHMT-8 , Issue.2 , pp. 253-258
    • Iwase, N.1    Anzai, K.2    Shinozuka, K.3    Hirao, O.4    Thanh, T.D.5    Sugiura, Y.6
  • 4
    • 2942545032 scopus 로고
    • New technology for high power hybrid 1C
    • T. Endoh and Y. Kurihara, "New technology for high power hybrid 1C," The Hitachi Hyouron, vol. 72, no. 12, pp. 1301-1304, 1990.
    • (1990) The Hitachi Hyouron , vol.72 , Issue.12 , pp. 1301-1304
    • Endoh, T.1    Kurihara, Y.2
  • 5
    • 0009340946 scopus 로고
    • Bonding mechanism between aluminum nitride substrate and Ag-Cu-Ti solder
    • Y. Kurihara, S. Takahashi, S. Ogihara, and T. Kurosu, "Bonding mechanism between aluminum nitride substrate and Ag-Cu-Ti solder," IEEE Trans. C. H. M. T., vol. 15, no. 3, pp. 361-368, 1992.
    • (1992) IEEE Trans. C. H. M. T. , vol.15 , Issue.3 , pp. 361-368
    • Kurihara, Y.1    Takahashi, S.2    Ogihara, S.3    Kurosu, T.4
  • 7
    • 33746058875 scopus 로고
    • Optimization of a nitrogen based atmosphere for the manufacturing of copper thick-films over aluminum nitride substrates
    • S. Mellul, D. Navarro, P. Massiot, and F. Rotman, "Optimization of a nitrogen based atmosphere for the manufacturing of copper thick-films over aluminum nitride substrates," Proc. 5th International Microelectronics Conf., pp. 279-286, 1990.
    • (1990) Proc. 5th International Microelectronics Conf. , pp. 279-286
    • Mellul, S.1    Navarro, D.2    Massiot, P.3    Rotman, F.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.