The effect of variation in hydrogen dilution and RF power density on the properties of a-SiGe:H and related solar cells

Journal of Physics D: Applied Physics

Volumn 29, Issue 6, 1996, Pages 1666-1674

  Hazra, Sukti ^a   Middya, A R ^a   Ray, Swati ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; ELECTRONIC PROPERTIES; HYDROGEN; METALLIC MATRIX COMPOSITES; NITROGEN; OPTICAL PROPERTIES; OXYGEN; RELAXATION PROCESSES; SATURATION (MATERIALS COMPOSITION); SOLAR CELLS; VACUUM APPLICATIONS;

HYDROGEN DILUTION; HYDROGENATED AMORPHOUS SILICON GERMANIUM ALLOY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RF POWER DENSITY; ULTRA HIGH VACUUM MULTICHAMBER SYSTEM; VARIATION EFFECT;

AMORPHOUS FILMS;

EID: 0030171253     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/29/6/037     Document Type: Article

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