Dynamics of doubly resonant Raman scattering and resonant luminescence in ultrathin InAs/GaAs quantum wells

Journal of the Optical Society of America B: Optical Physics

Volumn 13, Issue 6, 1996, Pages 1224-1231

  Brubach J ^a   Haverkort, J E M ^a   Wolter, J H ^a   Wang, P D ^b,d   Ledentsov, N N ^b,c   Sotomayor Torres, C M ^b   Zhukov, A E ^c   Kop'ev, P S ^c   Ustinov, V M ^c  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c IOFFE INSTITUTE   (Russian Federation)

^d University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON RESONANCE; ELECTRON TRANSITIONS; EXCITONS; FILM GROWTH; LUMINESCENCE; PHOTOLUMINESCENCE; PHOTONS; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; ULTRATHIN FILMS;

DECAY TIME; RESONANT EXCITATION; RESONANT LUMINESCENCE; SHARP EMISSION LINE;

LIGHT EMISSION;

EID: 0030171215     PISSN: 07403224     EISSN: None     Source Type: Journal    
DOI: 10.1364/JOSAB.13.001224     Document Type: Article

References (27)

1. E. P. O'Reilly, "Valence band engineering in strained layer structures," Semicond. Sci. Technol. 4, 121-137 (1989).
2. 4 short period superlattice quantum well lasers," Appl. Phys. Lett. 62, 2018-2020 (1993).
3. F. Houzay, C. Guille, J. M. Moison, P. Henoc, and F. Barthe, "First stages of the MBE growth of InAs on (001) GaAs," J. Cryst. Growth 81, 67-72 (1987).
4. H. Munekata, L. L. Chang, S. C. Woronick, and Y. H. Kao, "Lattice relaxation of InAs heteroepitaxy on GaAs," J. Cryst. Growth 81, 237-241 (1987).
5. R. Cingolani, O. Brandt, L. Tapfer, G. Scarmaccio, G. C. LaRocca, and K. Ploog, "Exciton localization in submonolayer InAs/GaAs multiple quantum-wells," Phys. Rev. B. 42, 3209-3212 (1990).
6. S. Wilke and D. Hennig, "Theoretical approach to δ doping of GaAs with In," Phys. Rev. B 43, 12470-12476 (1991).
7. P. D. Wang, N. N. Ledentsov, C. M. Sotomayor Torres, P. S. Kop'ev, and V. M. Ustinov, "Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high index surfaces," Appl. Phys. Lett. 64, 1526-1528 (1994).
8. 1-xAs quantum-wells," Phys. Rev. B 35, 664-674 (1987).
9. 1-xAs quantum-wells," Solid State Commun. 60, 213-216 (1986).
10. R. C. Miller, D. A. Kleinman, C. W. Tu, and S. K. Sputz, "Doubly resonant LO-phonon Raman scatttering via the deformation potential with a single quantum-well," Phys. Rev. B 34, 7444-7446 (1986).
11. Y. R. Shen, "Distinction between resonance Raman scattering and hot luminescence," Phys. Rev. B 9, 622-626 (1974).
12. M. V. Kiein, "Equivalence of resonance Raman scattering in solids with absorption followed by luminescence," Phys. Rev. B 8, 919-921 (1973).
13. P. F. Williams, D. L. Rousseau, and S. H. Dweretsky, "Resonance fluorescence and resonance Raman scattering: lifetimes in molecular iodine," Phys. Rev. Lett. 32, 196-199 (1974).
14. 1-xTe mixed crystals: time resolved spectroscopy," Solid State Commun. 52, 583-587 (1984).
15. 1-xTe/ZnTe multiple quantum wells," Phys. Rev. Lett. 67, 128-131 (1991).
16. P. D. Wang, N. N. Ledentsov, C. M. Sotomayor Torres, A. E. Zhukov, P. S. Kop'ev, and V. M. Ustinov, "Resonant excitonic relaxation in ultrathin InAs/GaAs quantum-wells," Semicond. Sci. Technol. (to be published).
17. K. Muraki, S. Fukata, Y. Shiraki, and R. Ito, "Surface segregation of In atoms and its influence on the quantum levels in InGaAs/GaAs quantum wells," J. Cryst. Growth 127, 546-549 (1993).
18. C. Giannini, L. Tapfer, S. Lagomarsino, J. C. Boulliard, A. Taccoen, B. Capelle, M. Ilg, O. Brandt, and K. H. Ploog, "X-ray standing wave and high-resolution x-ray diffraction study of the GaAs/InAs/GaAs (100) heterointerface," Phys. Rev. B 48, 11496-11499 (1993).
19. N. N. Ledentsov, P. D. Wang, C. M. Sotomayor Torres, A. Yu. Egorov, M. V. Maximov, V. M. Ustinov, A. E. Zhukov, and P. S. Kop'ev, "Optical spectroscopic studies of InAs layer transformation on GaAs surfaces," Phys. Rev. B 50, 12171-12174 (1994).
20. J. C. M. Henning, Y. A. R. R. Kessener, P. M. Koenraad, M. R. Leys, W. van der Vleuten, J. H. Wolter, and A. M. Frens, "Photoluminescence study of Si delta-doped GaAs," Semicond. Sci. Technol. 6, 1079-1087 (1991).
21. R. Ulbrich, "Capture of hot electrons by ionized donors in GaAs," Phys. Rev. Lett. 27, 1512-1514 (1971).
22. O. Brandt, L. Tapfer, R. Cingolani, K. Ploog, M. Hohenstein, and F. Phillipp, "Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular beam epitaxy," Phys. Rev. B 41, 12599-12606 (1991).
23. P. D. Wang, N. N. Ledentsov, I. N. Yassievich, A. Pakhonov, A. Yu. Egorov, P. S. Kop'ev, and V. M. Ustinov, "Magnetooptical properties in ultrathin InAs-GaAs quantum well," Phys. Rev. B 50, 1604-1610 (1994).
24. P. D. Wang, N. N. Ledentsov, C. M. Sotomayor Torres, P. S. Kop'ev, A. Yu. Egorov, V. M. Ustinov, A. Pakhonov, and I. N. Yassievitch, "Magneto-luminescence in InAs monolayers grown in a GaAs matrix on (100) and high index surface," in Proceedings of the Twenty-second International Conference on the Physics of Semiconductors, D. J. Lockwood, ed. (National Research Council of Canada, Vancouver, Canada, 1994), p. 1263.
25. S. Wilke, H. Stolz, W. von der Osten, and G. Weimann, "Doubly resonant first order Raman scattering in narrow GaAs/AlGaAs quantum wells: scattering mechanisms and resonance profile," Superlatt. Microstruct. 10, 389-394 (1991).
26. H. Stolz, D. Schwarze, W. von der Osten, and G. Weiman, "Dephasing of excitons in quantum well structures studied by picosecond time-resolved resonant Rayleigh scattering," Superlatt. Microstruct. 9, 511-515 (1991).
27. U. Siegner, D. Weber, E. O. Göbel, D. Bennhardt, V. Heuckeroth, R. Saleh, H. Schwab, C. Klingshirn, J. M. Hvam, and V. G. Lyssenko, "Optical dephasing in semiconductor mixed crystals," Phys. Rev. B 46, 4564-4581 (1992).