Deep trap measurement in Hg1-xCdxTe by isothermal capacitance and deep-level transient spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 6 SUPPL. A, 1996, Pages 3374-3375

  Sato, Koji ^a   Suno, Katsuhiko ^a   Wada, Hideo ^b   Okamoto, Yoichi ^a   Morimoto, Jun ^a   Miyakawa, Toru ^a  

^a NATIONAL DEFENSE ACADEMY   (Japan)

^b JAPAN DEFENSE AGENCY   (Japan)

Author keywords

Activation energy; Capture cross section; Deep level; DLTS; HgCdTe; ICTS; MCT; Narrow gap semiconductor

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; LATTICE CONSTANTS; LEAKAGE CURRENTS; PHOTODIODES; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

CAPTURE CROSS SECTION; DEEP TRAP MEASUREMENT; HOLE MOBILITY; ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY;

MERCURY COMPOUNDS;

EID: 0030170699     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3374     Document Type: Article

References (7)

1. D. L. Polla and C. E. Jones: J. Appl. Phys. 52 (1981) 5118.
2. D. L. Polla and C. E. Jones: J. Appl. Phys. 52 (1981) 5132.
3. W. Scott: J. Appl. Phys. 43 (1972) 1055.
4. D. V. Lang: J. Appl. Phys. 45 (1974) 3023.
5. H. Okushi and Y. Tokumaru: Jpn. J. Appl. Phys. 19 (1980) L335.
6. D. L. Polla and C. E. Jones: Solid State Commun. 36 (1980) 809.
7. M. C. Chen and R. A. Schiebel: J. Appl. Phys. 71 (1992) 5269.