Optically detected electron paramagnetic resonance of the shallow aluminium acceptor in 4H-and 6H-silicon carbide

Solid State Communications

Volumn 98, Issue 9, 1996, Pages 835-838

  Reinke, J ^a   Greulich Weber, S ^a   Spaeth, J M ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

A. semiconductors; C. impurities in semiconductors; E. electron paramagnetic resonance

Indexed keywords

ABSORPTION SPECTROSCOPY; ALUMINUM; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; MAGNETIC FIELDS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SILICON CARBIDE;

DONOR ACCEPTOR RECOMBINATION LUMINESCENCE; MAGNETIC CIRCULAR DICHROISM; MODIFIED LELY PROCESS; OPTICAL ABSORPTION TRANSITIONS; SHALLOW ALUMINUM ACCEPTOR;

PARAMAGNETIC RESONANCE;

EID: 0030170470     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)80017-2     Document Type: Article

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