The behaviour of Si and CoSi2 during low energy nitrogen bombardment, with and without O2-flooding

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 113, Issue 1-4, 1996, Pages 534-538

  Deleu, J ^a   Brijs, B ^a   Storm, W ^a   Vandervorst, W ^a   De Coster, W ^b  

^a IMEC   (Belgium)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; DIFFUSION; NITROGEN; OXIDES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON; SPUTTERING; STOICHIOMETRY; SURFACES; VACUUM TECHNOLOGY; X RAY PHOTOELECTRON SPECTROSCOPY;

COBALT SILICON; HIGH LOW OXYGEN PRESSURE ENVIRONMENT; ION INCORPORATION; LOW ENERGY REACTIVE ION BOMBARDMENT; OXIDE FLOODING; PRIMARY ION INCORPORATION;

ION BOMBARDMENT;

EID: 0030170323     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01317-2     Document Type: Article

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