Effects of bottom electrodes on dielectric properties of ECR-PECVD Ta2O5 thin film

Materials Chemistry and Physics

Volumn 44, Issue 3, 1996, Pages 288-292

  Kim, Il ^a   Chun, John S ^a   Lee, Won Jong ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Bottom electrode; Electron cyclotron resonance plasma enhanced chemical vapour deposition; Tantalum oxide thin film

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; DIELECTRIC FILMS; DIELECTRIC PROPERTIES OF SOLIDS; ELECTROCHEMICAL ELECTRODES; ELECTRON CYCLOTRON RESONANCE; INTERFACES (MATERIALS); OXIDATION; PLASMA APPLICATIONS; SURFACES; TANTALUM COMPOUNDS;

BOTTOM ELECTRODE; INCUBATION PERIOD; INTERFACIAL OXIDE LAYERS; TANTALUM OXIDE THIN FILMS;

THIN FILMS;

EID: 0030170237     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/0254-0584(96)80072-1     Document Type: Article

References (6)

1. S. Shinriki, Y. Nishioka, Y. Ohji and K. Mukai, IEEE Trans. Electron Dev., 36 (1989) 328.
2. I. Kim, S.D. Ahn, B.W. Cho, S.T. Ahn, J.Y. Lee, J.S. Chun and W.J. Lee, Jpn. J. Appl. Phys., 33 (1994) 6111.
3. G.V. Samsonov, The Oxide Handbook, IFI/Plenum, New York, 1981, p. 211.
4. Y. Nishioka, H. Shinriki and K. Mukai, J. Appl. Phys., 61 (1987) 2335.
5. T. Kato and T. Ito, J. Electrochem. Soc., 135 (1988) 2586.
6. K. Ishibashi, B.K. Patnaik and N.R. Parikh, J. Vac. Sci. Technol. B, 12 (1994) 2822.