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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 113, Issue 1-4, 1996, Pages 231-234

The effect of ion implantation in the microstructure of Si3N4 films: An X-ray absorption study

(3) Paloura, E C a Mertens, A b Holldack, K c

a ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

b HUMBOLDT UNIVERSITY (Germany)

c HAHN MEITNER INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ELECTROMAGNETIC WAVE ABSORPTION; IONS; MICROSTRUCTURE; RADIATION DAMAGE; RESONANCE; SILICON NITRIDE; STOICHIOMETRY; THERMAL EFFECTS; THIN FILMS; X RAY SPECTROSCOPY;

CHARACTERISTIC RESONANCE LINE; EXTENDED X RAY ABSORPTION FINE STRUCTURE; NEAR EDGE X RAY ABSORPTION FINE STRUCTURE; NITROGEN DANGLING BONDS; SILICON NITRIDE FILMS;

ION IMPLANTATION;

EID: 0030169629 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/0168-583X(95)01368-7 Document Type: Article

Times cited : (8)

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