STM study of Ar+-induced defects produced by near-threshold energy collision

Surface Science

Volumn 357-358, Issue , 1996, Pages 165-169

  Hahn, J R ^a   Kang, H ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Graphite; Ion bombardment; Scanning tunneling microscopy; Surface defects

Indexed keywords

CHARGE DENSITY; ION IMPACT HILLOCKS; LOCAL DENSITY OF STATES; NEAR THRESHOLD ENERGY COLLISION; SURFACE DEFECTS;

ARGON; ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; GRAPHITE; HEATING; ION BOMBARDMENT; SURFACES;

SCANNING TUNNELING MICROSCOPY;

EID: 0030169474     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)80075-6     Document Type: Article

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