Observation of the growth modes of In on Ga-covered Si(111) surfaces by using ultra-high-vacuum scanning electron microscopy

Surface Science

Volumn 356, Issue 1-3, 1996, Pages 39-46

  Yamanaka, Toshiro ^a   Shimomura, Naoharu ^a   Ino, Shozo ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Gallium; Indium; Molecular beam epitaxy; Reflection high energy electron diffraction (RHEED); Scanning electron microscopy (SEM); Silicon; Surface structure, morphology, roughness, and topography

Indexed keywords

ATOMS; EPITAXIAL GROWTH; GALLIUM; INDIUM; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SILICON; SURFACE ROUGHNESS; SURFACE STRUCTURE;

GROWTH MODES; TOPOGRAPHY; ULTRA HIGH VACUUM SCANNING ELECTRON MICROSCOPY;

SURFACE PHENOMENA;

EID: 0030169305     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00018-0     Document Type: Article

References (25)

1. S. Ino, D. Watanabe and S. Ogawa, J. Phys. Soc. Jpn. 17 (1962) 1074; S. Ino, D. Watanabe and S. Ogawa, J. Phys. Soc. Jpn. 19 (1964) 881.
2. S. Ino, D. Watanabe and S. Ogawa, J. Phys. Soc. Jpn. 17 (1962) 1074; S. Ino, D. Watanabe and S. Ogawa, J. Phys. Soc. Jpn. 19 (1964) 881.
3. S. Ino, J. Phys. Soc. Jpn. 21 (1966) 346.
4. M. Copel, M.C. Reuter, E. Kaxiras and R.M. Tromp, Phys. Rev. Lett. 63 (1989) 632.
5. M. Horn-von Hoegen, F.K. LeGoues, M. Copel, M.C. Reuter and R.M. Tromp, Phys. Rev. Lett. 67 (1991) 1130.
6. S. Iwanari and K. Takayanagi, Jpn. J. Appl. Phys. 30 (1991) L1978.
7. K. Fukutani, H. Daimon and S. Ino, Proc. 3rd Int. Conf. on The Structure of Surfaces, Milwaukee, USA, 1990, Springer Series in Surface Science, Vol. 24, The Structure of Surfaces III, Ed. S.Y. Tong (Springer, Berlin, 1991) p. 615.
8. K. Fukutani, Surf. Sci. 281 (1993) 285.
9. T. Yamanaka, A. Endo and S. Ino, Surf. Sci. 294 (1993) 53.
10. H.A. van der Vegt, H.M. van Pinxteren, M. Lohmeier, E. Vlieg and J.M.C. Thornton, Phys. Rev. Lett. 68 (1992) 3335.
11. S. Ino, T. Ichikawa and S. Okada, Jpn. J. Appl. Phys. 19 (1980) 1451.
12. S. Hasegawa, S. Ino, Y. Yamamoto and H. Daimon, Jpn. J. Appl. Phys. 24 (1985) L387.
13. T. Yamanaka, T. Hanada, S. Ino and H. Daimon, Jpn. J. Appl. Phys. 31 (1992) L1503.
14. T. Yamanaka and S. Ino, to be published.
15. T. Yamanaka and S. Ino, Surf. Sci. 330 (1995) 126.
16. S. Ino, A. Endo and H. Daimon: Proc. Int. Conf. on The Structure of Surfaces, Milwaukee, USA, 1990, Springer Series in Surface Science, Vol. 24, The Structure of Surfaces III, Ed. S.Y. Tong (Springer, Berlin, 1991) p. 168.
17. A. Endo, H. Daimon and S. Ino, Proc. Int. Conf. on Electron Microscopy, Seattle (1990) I-304.
18. Y. Harada, T. Tomita, Y. Kokubo, H. Daimon and S. Ino, J. Electron Microsc. 42 (1993) 294.
19. A. Endo and S. Ino, Surf. Sci. 293 (1993) 165.
20. A. Endo and S. Ino, Jpn. J. Appl. Phys. 32 (1993) 4718.
21. M.S. Finney, C. Norris, P.B. Howes and E. Vlieg, Surf. Sci. 277 (1992) 330.
22. M. Otsuka and T. Ichikawa, Jpn. J. Appl. Phys. 24 (1985) 1103.
23. D.M. Chen, J.A. Golovchenko, P. Bedrossian and K. Mortensen, Phys. Rev. Lett. 61 (1988) 2867.
24. R.J. Phaneuf, N.C. Bartelt and ED, Williams, Surf. Sci. 268 (1992) 227.
25. R.M. Tromp and M.C. Reuter, Phys. Rev. Lett. 73 (1994) 110.