A new planar-structure InAlGaAs-InAlAs superlattice avalanche photodiode with a Ti-implanted guard-ring

IEEE Photonics Technology Letters

Volumn 8, Issue 6, 1996, Pages 827-829

  Watanabe, I ^a   Tsuji, M ^a   Makita, K ^a   Taguchi, K ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; BANDWIDTH; ELECTRIC CURRENTS; EPITAXIAL GROWTH; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; TITANIUM;

DARK CURRENT CHARACTERISTICS; GAIN BANDWIDTH; GAS SOURCE MOLECULAR BEAM EPITAXY; OPTICAL RECEIVER; RING SHAPED TRENCH; SELECTIVE WET ETCHING; SUPERLATTICE AVALANCHE PHOTODIODES;

PHOTODIODES;

EID: 0030169244     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.502108     Document Type: Article

References (9)

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