H2-TPD study on the difference in the growth kinetics between SiH4- and Si2H6-GSMBE

Surface Science

Volumn 357-358, Issue , 1996, Pages 555-559

  Suemitsu, M ^a   Nakazawa, H ^a   Miyamoto, N ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; HYDROGEN; MOLECULAR BEAM EPITAXY; QUENCHING; REACTION KINETICS; SEMICONDUCTING SILICON; SILANES; TEMPERATURE PROGRAMMED DESORPTION;

DISILANE; GAS SOURCE MOLECULAR BEAM EPITAXY;

SURFACE PHENOMENA;

EID: 0030169181     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00222-1     Document Type: Article

References (12)

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