Design and fabrication of a 1 Gb/s OEIC receiver for fiber-optic data link applications

Journal of Lightwave Technology

Volumn 14, Issue 6, 1996, Pages 1480-1487

  Shih, Chian Gauh ^b,c,d   Chang, Wei Heng ^a,b,c,e   Wang, Jianshi ^b,c,f   Barlage, Douglas W ^a,b,c,g,h   Teng, Chih Chong ^b,c   Feng, Milton ^{a,b,c,i,j,k,l}  

^a IEEE

^b University of Illinois at Urbana Champaign   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^d UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^e NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^f ADVANCED MICRO DEVICES   (United States)

^g WRIGHT STATE UNIVERSITY   (United States)

^h Wright Laboratories

ⁱ Och Spine at New York Presbyterian Hospitals   (United States)

^j RAYTHEON COMPANY   (United States)

^k Ford Microelectronics Inc   (United States)

^l Dept of Elec and Comp Engineering ^*

more..

Author keywords

[No Author keywords available]

Indexed keywords

BIT ERROR RATE; INTEGRATED CIRCUIT LAYOUT; INTEGRATED OPTOELECTRONICS; MESFET DEVICES; OPTICAL LINKS; PHOTODETECTORS; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL RECEIVERS;

FIBER OPTIC DATA LINKS;

OPTICAL COMMUNICATION EQUIPMENT;

EID: 0030169098     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.511677     Document Type: Article

References (12)

1. M. Feng, V. Eu, M. Siracusa, E. Watkins, H. Kimura, and H. Winston, "Silicon implanted super low-noise GaAs MESFET," Electron. Lett., vol. 18, pp. 21-23, 1982.
2. M. Feng, J. Laskar, J. Kruse, and R. Neidhard, "Ultra low-noise performance of 0.15 micron gate GaAs MESFET's made by direct ion implantation for low-cost MMIC's applications," IEEE Microwave Guided Wave Lett., vol. 2, pp. 194-194, 1992.
3. J. Crow et al., "A GaAs MESFET IC for optical multiprocessor networks," IEEE Trans. Electron. Devices, vol. 36, 1989.
4. C. Takano et al., "Monolithic integration of 5 Gb/s optical receiver block for short-distance communication," IEEE J. Solid-State Circuits, vol. 27, 1992.
5. J. F. Ewen, K. P. Jackson, R. J. S. Bates, and E. B. Flint, "GaAs fiber-optic modules for optical data processing networks," J. Lightwave Technol., vol. 9, Dec. 1991.
6. R. Mactaggart, M. Bendet, and S. Taylor, "A complete 400 Mb/s burst-mode data OEIC receiver," in14th Ann. GaAs IC Symp., 1992, pp. 283-286.
7. 2 and capless," J. Appl. Phys., vol. 54, pp. 2990-2993, 1981.
8. x contacts," IEEE J. Quantum Electron., vol. QE-22, pp. 1073-1-77, 1986.
9. R. G. Smith and S. D. Personick, "Receiver design for optical fiber communication systems," in Semiconductor Device for Optical Communication, H. Kressel, Ed., New York: Springer-Verlag, 1980.
10. T. V. Muoi, "Receiver design of optical fiber systems," Optical Transmission, E. E. B. Basch, Ed. New York: Macmillan, 1987.
11. J. S. Wang, C. G. Shih, W. H. Chang, J. R. Middleton, P. J. Apostolakis, and M. Feng, "11 GHz bandwidth optical integrated receivers using GaAs MESFET and MSM technology," IEEE Photon. Technol. Lett., vol. 5, pp. 316-318, Mar. 1993.
12. C. G. Shih, D. Barlage, J. S. Wang, and M. Feng, "Design and fabrication of 5 Gb/s fully integrated OEIC receivers using direct ion implanted GaAs MESFET-MSM," in TH1D-2, MTT-S Int. Microwave Symp., 1994.