Radiation-induced surface leakage currents in silicon microstrip detectors

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 2, 1996, Pages 1746-1750

  Foland, A D ^a   Alexander, J P ^a   Hopman, P I ^a   Kim, P C ^a   Ward, C W ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MICROSTRIP DEVICES; MOS DEVICES; OPTICAL VARIABLES MEASUREMENT; RADIATION DAMAGE; SEMICONDUCTING SILICON; SILICA; SILICON SENSORS; ULTRAVIOLET RADIATION; X RAYS;

DAMAGE RATE; RADIATION INDUCED SURFACE LEAKAGE CURRENTS; SILICON MICROSTRIP DETECTORS; SILICON SILICA INTERFACE; ULTRAVIOLET MEASUREMENTS;

PARTICLE DETECTORS;

EID: 0030168855     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.507215     Document Type: Article

References (5)

1. P.I. Hopman, el al, "Optimization of Silicon Microstrip Detectors for Use in the CLEO III Silicon Vertex Detector," contributed to the Second International Symposium on Development and Application of Semiconductor Tracking Detectors, Hiroshima, October 1995;
2. to appear in Nuclear Instruments and Methods.
3. Brower, Schubert, and Seager. "Electron paramagnetic resonance and capacitance-voltage studies of ultraviolet irradiated Si-SiO2 interfaces." Journal of Applied Physics 68 July 1990 p. 366.
4. Hildesheim and Seidel, "An Investigation into the Radiation Damage of the Silicon Detectors of the H1-PLUG Calorimeter within the HERA environment." LANL Preprint Number hep-ex/9507013.
5. Sze, S.M. Physics of Semiconductor Devices. New York: Wiley and Sons, 1981.