Irradiation tests of double-sided silicon strip detectors with a special guard ring structure

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 2, 1996, Pages 1113-1118

  Abt, I ^a   Andricek, L ^a   Bauer, C ^a,c   Fox, H ^a   Halley, A ^a,d   Kroha, H ^a   Richter, R H ^a   Riechmann, K ^a   Rietz, M ^a   Rubsam R ^a   Seywcrd, H ^a   St Denis, R ^a   Baumann, I ^b   Knopfle K T ^b  

^a MAX PLANCK INSTITUT FÜR PHYSIK   (Germany)

^b MAX PLANCK INSTITUT FÜR KERNPHYSIK   (Germany)

^c MPI   (Germany)

^d UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; HIGH ENERGY PHYSICS; ION IMPLANTATION; MICROSTRIP DEVICES; PLASMA COLLISION PROCESSES; SEMICONDUCTOR DOPING; SILICON SENSORS; STORAGE RINGS;

CAPACITIVELY COUPLED STRIPS; DOUBLE SIDED SILICON STRIP DETECTORS; GUARD RING STRUCTURE;

PARTICLE DETECTORS;

EID: 0030168850     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.506647     Document Type: Article

References (18)

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