Paraxial-misalignment insensitive external-cavity semiconductor-laser array emitting near-diffraction limited single-lobed beam

IEEE Journal of Quantum Electronics

Volumn 32, Issue 6, 1996, Pages 996-1008

  Pillai, Ramadas M R ^a,b,c,f,g,h   Garmire, Elsa M ^{a,b,d,e,i,j,k,l,m,n}  

^a IEEE

^b UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^c Northwestern University   (United States)

^d DARTMOUTH COLLEGE   (United States)

^e UNIVERSITY OF KERALA   (India)

^f INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^g Optical Waveguide Group   (United States)

^h OPTICAL SOCIETY OF AMERICA   (United States)

ⁱ HARVARD UNIVERSITY   (United States)

^j MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^k CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^l MIT ^*

^m AMERICAN PHYSICAL SOCIETY   (United States)

ⁿ NATIONAL ACADEMY OF ENGINEERING   (United States)

more..

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; DIFFRACTION; DIFFRACTION GRATINGS; ELECTRIC CURRENTS; GEOMETRY; LENSES; MIRRORS; SEMICONDUCTING GALLIUM ARSENIDE;

BROAD-AREA LASER MODE THEORY; CYLINDRICAL LENSES; FOCUSED ION BEAM MICROMACHINING; LIGHT CURRENT CHARACTERISTICS; MASTER LASERS; RADIATION LOSSES; SPHERICAL LENSES; WET CHEMICAL ETCHING;

SEMICONDUCTOR LASERS;

EID: 0030168750     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.502377     Document Type: Article

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