In-situ strain analysis with high spatial resolution: A new failure inspection tool for integrated circuit applications

Engineering Failure Analysis

Volumn 3, Issue 2, 1996, Pages 109-113

  Nshanian, T ^a   Dove, R ^a   Rajan, Krishna ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Moir fringes; SEM; Semiconductor; Strain measurement; Voltage contrast

Indexed keywords

DEFECTS; ELASTICITY; IMAGING TECHNIQUES; INTEGRATED CIRCUIT TESTING; MOIRE FRINGES; NONDESTRUCTIVE EXAMINATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; STRAIN; STRAIN MEASUREMENT;

DAMAGE; SCANNING ELECTRON MICROSCOPE; SECONDARY ELECTRON DETECTION; SPATIAL RESOLUTION SENSITIVITY; STRAIN ANALYSIS; VOLTAGE CONTRAST METHODS;

FAILURE ANALYSIS;

EID: 0030168611     PISSN: 13506307     EISSN: None     Source Type: Journal    
DOI: 10.1016/1350-6307(96)00001-5     Document Type: Article

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