Growth of CuInSe2 by metallorganic chemical vapour deposition (MOCVD): New copper precursor

Journal of Materials Science: Materials in Electronics

Volumn 7, Issue 3, 1996, Pages 201-205

  Duchemin, S ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL REACTORS; COMPOSITION; GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; THIN FILMS;

COPPER INDIUM SELENIDE; COPPER PRECURSOR; HEXAFLUOROACETYLACETONATO COPPER; HYDROGEN SELENIDE; TRIETHYLINDIUM; TRIMETHYLAMINE; TRIMETHYLINDIUM;

COPPER COMPOUNDS;

EID: 0030168609     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00133116     Document Type: Article

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