Bringing antimonides up to potential

III-Vs Review

Volumn 9, Issue 3, 1996, Pages 51-55

  Micklethwaite, W F ^a   Fines, R G ^a   Freschi, D J ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SUBSTRATES;

ANTIMONIDE COMPOUND SEMICONDUCTORS;

SEMICONDUCTING ANTIMONY COMPOUNDS;

EID: 0030168539     PISSN: 09611290     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0961-1290(96)80128-1     Document Type: Article

References (4)

1. Y.J. van der Meulen Growth Properties of GaSb: The Structure of the Residual Acceptor Centres J. Phys. Chem. Solids 28 1967 25 32
2. W.A. Sunder Czochralski Growth and Characterization of GaSb 78 J. Crystal Growth 1980 9 18 1980
3. K. Nakashima Electrical and Optical Properties of Gallium Antimonide Jap. J. Applied Phys. 20 2 1981 1085 1094
4. G. Edelin D. Mathiot A Model for the Determination of the Defect Concentrations in III–V Compounds Phil. Mag “B” 42 1980 95 110