Surface-micromachined capacitive differential pressure sensor with lithographically defined silicon diaphragm

Journal of Microelectromechanical Systems

Volumn 5, Issue 2, 1996, Pages 98-105

  Mastrangelo, Carlos H ^a,b,d,e,f   Zhang, Xia ^{a,c,d,e,g,h,i}   Tang, William C ^a,c,d,j,k,l  

^a IEEE

^b University of Michigan   (United States)

^c Ford Microelectronics Inc   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e FORD MOTOR COMPANY   (United States)

^f UNIVERSITY OF MICHIGAN   (United States)

^g PEKING UNIVERSITY   (China)

^h RICE UNIVERSITY   (United States)

ⁱ AMERICAN PHYSICAL SOCIETY   (United States)

^j IBM   (United States)

^k FORD RESEARCH LABORATORY   (United States)

^l CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

more..

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CAPACITORS; DIAPHRAGMS; ELECTRODES; ERRORS; ETCHING; MICROMACHINING; PRESSURE MEASUREMENT; SENSITIVITY ANALYSIS; SILICON WAFERS; TRANSFER FUNCTIONS;

BURIED ETCH STOP; PATTERNED ETCH STOP; POLYSILICON STATIONARY ELECTRODES; SILICON DIAPHRAGM; SURFACE MICROMACHINED PRESSURE SENSOR; TEMPERATURE COEFFICIENT; WAFER THICKNESS VARIATIONS;

SENSORS;

EID: 0030168493     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/84.506197     Document Type: Article

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