Deposition of PZT films by MOCVD at low temperature and their change in properties with annealing temperature and Zr/Ti ratio

Thin Solid Films

Volumn 279, Issue 1-2, 1996, Pages 140-144

  Kim, Young Min ^a   Lee, Won Jae ^a   Kim, Ho Gi ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Chemical vapour deposition (CVD); Lead; Titanium; Zirconium

Indexed keywords

ANNEALING; CHEMICAL REACTIONS; COERCIVE FORCE; COMPOSITION; LOW TEMPERATURE PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; PERMITTIVITY; PEROVSKITE; THIN FILMS; TITANIUM; ZIRCONIUM;

CARRIER GAS FLOW RATE; GAS PHASE REACTION; LEAD ZIRCONIUM TITANATE FILMS; OPTIMUM ANNEALING TEMPERATURE;

SEMICONDUCTING LEAD COMPOUNDS;

EID: 0030168259     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08171-2     Document Type: Article

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