Effect of Cr implantation on the morphology of Al:Si films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 113, Issue 1-4, 1996, Pages 191-195

  Zaborowski, M ^a   Gawlik, G ^a   Barcz, A ^a   Turos, A ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; CHROMIUM; GRAIN SIZE AND SHAPE; IONS; MAGNETRON SPUTTERING; METALLIC FILMS; MORPHOLOGY; PRECIPITATION (CHEMICAL); RADIATION EFFECTS; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SINTERING;

ALUMINUM SILICON FILMS; ATOM MOBILITY; CHROMIUM ION IMPLANTATION; DIFFUSIVITY; HILLOCKS; OXIDIZED SILICON WAFERS;

ION IMPLANTATION;

EID: 0030168060     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01363-6     Document Type: Article

References (7)

1. F.M. d'Heurle, Int. Mater. Rev. 34 (2) (1989) 53.
2. F. Ericson, N. Kristensen, J. Schweite and U. Smith, J. Vacuum Sci. Technol. B 9 (1) (1991) 58.
3. K.N. Tu, J.W. Mayer and L.C. Feldman, Electronic Thin Film Science (Macmillan, New York, 1992), p. 373.
4. O.W. Holland and J.R. Alvis, J. Electrochem. Soc. 134 (8) (1987) 2017.
5. N. Peacock, Thin Solid Films 156 (1988) 173.
6. M. Zaborowski, M. Adamiec and A. Barcz, in: Materials for Advanced Metallization, 19-22 March, 1995, Radebeul/ Dresden, Germany p. 165.
7. M. Zaborowski, A. Barcz, G. Gawlik and I. Rangelow, in: Materials for Advanced Metallization, 19-22 March, 1995, Radebeul/Dresden, Germany p. 151.