Optical characteristics of multitransverse-mode two-dimensional vertical-cavity top surface-emitting laser arrays

IEEE Journal of Quantum Electronics

Volumn 32, Issue 6, 1996, Pages 986-995

  Catchmark, Jeffrey M ^{a,b,c,d,h,i,j}   Rogers, L E ^e,f   Morgan, Robert A ^{a,b,g,k,l,m,n}   Asom, M T ^b   Guth, G D ^b   Christodoulides, D N ^c  

^a IEEE

^b LUCENT TECHNOLOGIES   (United States)

^c Lehigh University   (United States)

^d Princeton Electronic Systems   (United States)

^e UNIVERSITY OF NEW MEXICO   (United States)

^f Opti Power   (United States)

^g HONEYWELL TECHNOLOGY CENTER   (United States)

^h PENNSYLVANIA STATE UNIVERSITY   (United States)

ⁱ LEHIGH UNIVERSITY   (United States)

^j Princeton Power Systems Inc   (United States)

^k UNIVERSITY OF WISCONSIN EAU CLAIRE   (United States)

^l UNIVERSITY OF ARIZONA   (United States)

^m UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

ⁿ OPTICAL SOCIETY OF AMERICA   (United States)

more..

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; LIGHT POLARIZATION; MIRRORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

FAR FIELD PROFILES; METAL GRID; NEAR FIELD PROFILES; OHMIC METALLIZATION; TWO DIMENSIONAL VERTICAL CAVITY TOP SURFACE EMITTING LASER ARRAY;

SEMICONDUCTOR LASERS;

EID: 0030167799     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.502376     Document Type: Article

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