Temperature compensation circuit for linear microwave amplifiers

IEEE Microwave and Guided Wave Letters

Volumn 6, Issue 6, 1996, Pages 238-240

  Alleva, V ^a,b   Di Paolo, F ^a  

^a IEEE

^b Elettronica SpA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DIFFERENTIAL EQUATIONS; ELECTRIC VARIABLES MEASUREMENT; MESFET DEVICES; PROBLEM SOLVING; SEMICONDUCTING GALLIUM ARSENIDE; TRANSCONDUCTANCE;

GATE VOLTAGE; MONOLITHIC AMPLIFIERS; TEMPERATURE COMPENSATION CIRCUIT;

MICROWAVE AMPLIFIERS;

EID: 0030167757     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.509901     Document Type: Article

References (6)

1. J. V. Di Lorenzo and D. D. Khandelwal, GaAs FET Principles and Technology. Norwood, MA: Artech House, 1982.
2. R. Soares and J. Graffeuil, Applications of GaAs MeSFETS. Norwood, MA: Artech House, 1983.
3. S. M. Sze, Fisica del Dispositivi a Semiconduttore, Tamburini, Ed.
4. M. Bujatti and M. Massani, "Transistori ad effetto di campo con barriera di Schottky ad Arseniuro di Gallio," Carateristiche Fisiche e Circuitali, Rivista tecnica Selenia.
5. L. Raffaelli and R. Goldwasser, "Temperature compensation for microwave GaAs FET amplifiers," Microwave J., May 1986.
6. V. Alleva, Selenia technical report.