Biexciton luminescence from GaN epitaxial layers

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 6 B, 1996, Pages

  Okada, K ^a   Yamada, Y ^a   Taguchi, T ^a   Sasaki, F ^a   Kobayashi, Sh ^a   Tani, T ^a   Nakamura, Sh ^a   Shinomiya, G ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; DIODES; EPITAXIAL GROWTH; EXCITONS; EXPERIMENTS; GALLIUM; PHOTOLUMINESCENCE;

BIEXCITON LUMINESCENCE; HIGH-DENSITY EXCITATION;

LUMINESCENCE OF SOLIDS;

EID: 0030167486     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l787     Document Type: Article

References (14)