Observation of strain distributions in partially relaxed In0.2Ga0.8As on GaAs using electron channelling contrast imaging

Philosophical Magazine Letters

Volumn 73, Issue 6, 1996, Pages 337-344

  Wilkinson, Angus J ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SPECTRUM ANALYSIS; STRAIN; STRESS CONCENTRATION; STRESS RELAXATION;

ELECTRON CHANNELLING CONTRAST IMAGING; INDIUM GALLIUM ARSENIDE; STRAIN DISTRIBUTIONS; STRAIN RELAXATION;

DISLOCATIONS (CRYSTALS);

EID: 0030166908     PISSN: 09500839     EISSN: 13623036     Source Type: Journal    
DOI: 10.1080/095008396180605     Document Type: Article

References (9)

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