Using positron 2D-ACAR as a probe of point defects in GaAs: The As vacancy as a case study

Applied Physics A: Materials Science and Processing

Volumn 62, Issue 6, 1996, Pages 529-532

  Ambigapathy, R ^a   Corbel, C ^b   Hautojarvi P ^c   Manuel, A A ^a   Saarinen, K ^c  

^a UNIVERSITY OF GENEVA   (Switzerland)

^b CEA SACLAY   (France)

^c AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CALCULATIONS; CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; IONS; MOLECULAR DYNAMICS; PHOTONS; POINT DEFECTS;

ANGULAR CORRELATION OF ANNIHILATION RADIATION; ARSENIC VACANCY; MOMENTUM DISTRIBUTION; POSITRON LIFETIME; TWO DIMENSIONAL;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030166879     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF01571688     Document Type: Article

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