Studies of Ni-B as an electrochemical metal migration barrier

IEEE Transactions on Components Packaging and Manufacturing Technology Part A

Volumn 19, Issue 2, 1996, Pages 202-207

  Ho, Syh Ming ^a   Lian, Shy Ming ^b   Chen, Ker Ming ^c   Pan, Jing Pin ^a   Wang, Tsung Hsiung ^a   Hung, Aina ^b  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b Min Hsin Institute of Technology and Commerce   (Taiwan)

^c First International Computer Inc   (Taiwan)

Author keywords

Electronmicroscope; Mechanism; PI dielectric; Resistance

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC RESISTANCE MEASUREMENT; ELECTROCHEMISTRY; ELECTRON MICROSCOPES; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTING BORON;

BARRIER METAL; ELECTROCHEMICAL MIGRATION; POLYIMIDE DIELECTRIC SUBSTRATE;

ELECTRONIC EQUIPMENT MANUFACTURE;

EID: 0030166695     PISSN: 10709886     EISSN: None     Source Type: Journal    
DOI: 10.1109/95.506105     Document Type: Article

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