SCOPUS 정보 검색 플랫폼

Volumn 356, Issue 1-3, 1996, Pages 53-58

Formation conditions and atomic structure of the Si(111)-√19 Ni surface

(3) Parikh, S A a Lee, M Y a Bennett, P A a

a ARIZONA STATE UNIVERSITY (United States)

Author keywords

Auger electron spectroscopy; Low index single crystal surfaces; Morphology, roughness, and topography; Nickel; Reflection high energy electron diffraction (RHEED); Scanning tunneling microscopy; Silicon; Surface structure

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CRYSTAL ATOMIC STRUCTURE; DEPOSITION; MORPHOLOGY; NICKEL; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SILICON; SINGLE CRYSTALS; SURFACE ROUGHNESS; SURFACES;

FORMATION CONDITIONS; LATTICE REGISTRATION; LOW INDEX SINGLE CRYSTAL SURFACES; TOPOGRAPHY;

SURFACE STRUCTURE;

EID: 0030166661 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(96)00029-5 Document Type: Article

Times cited : (30)

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