Dual MOS Gate Controlled Thyristor (DMGCT) structure with short-circuit withstand capability superior to IGBT

IEEE Electron Device Letters

Volumn 17, Issue 6, 1996, Pages 294-296

  Ajit, J S ^a  

^a Power Integrations Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; BIPOLAR TRANSISTORS; CATHODES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTOR DEVICE STRUCTURES;

DUAL MOS GATE CONTROLLED THYRISTOR; GATE ELECTRODE; GATE VOLTAGE; INSULATED GATE BIPOLAR TRANSISTOR; SATURATION CURRENT;

THYRISTORS;

EID: 0030166533     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.496462     Document Type: Article

References (10)

1. B. J. Baliga, Semiconductor Power Devices. PWS, 1995.
2. V. A. K. Temple and W. Tantraporn, "Effect of temperature and load on MCT turn-off capability," IEDM Digest, pp. 118-121, 1984.
3. M. Nandakumar, M. S. Shekar, and B. J. Baliga, "Fast switching power MOS-gated (EST and BRT) thyristors," Proc. Int. Symp. Power semiconduct. Devices, May 1992, pp. 256-260.
4. J. S. Ajit and D. M. Kinzer, "1200 V 150 V insulated-gate thyristors," Proc. ISPSD, May 1995, pp. 34-39.
5. M. S. Shekar, B. J. Baliga, M. Nandakumar, S. Tandon, and A. Reisman, "High-voltage current saturation in emitter switched thyristors," IEEE Electron Device Lett., vol. 12, no. 7, pp. 387-389, July 1991.
6. J. S. Ajit and D. M. Kinzer, "New MOS-gate controlled thyristor (MGCT)," Proc. ISPSD, May 1995, pp. 123-128.
7. K. Oyama, T. Kunio, R. Koh, Y. Hayashi, K. Kajiyana, and K. Tsunenari, "High density dual-active-device-layer (DUAL) - CMOS structure with vertical tungsten plug-in wirings," IEDM Dig., pp. 51-54, 1990.
8. F. S. Chen, Y. S. Lin, G. A. Dixit, R. Sunderesan, C. C. Wei, and F. T. Liou, "Planarized aluminium metallization for sub-0.5 μm CMOS technology," IEDM Dig., pp. 51-54, 1990.
9. K. Ueno, K. Ohto, K. Tsunenari, K. Kajiyana, K. Kikuta, and T. Kikkawa, "A quarter-micron planarized interconnection technology with self-aligned plug," IEDM Dig., pp. 305-308, 1992
10. J. S. Ajit, "High voltage current saturation in MOS gate controlled thyristors," IEEE Electron Device Lett., to be published.