Improved performance of InAlAs-InGaAs-InP MSM photodetectors with graded superlattice structure grown by gas source MBE

IEEE Photonics Technology Letters

Volumn 8, Issue 6, 1996, Pages 830-832

  Zhang, Y G ^a   Li, A Z ^a   Chen, J X ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; HETEROJUNCTIONS; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES;

ABRUPT HETEROJUNCTION; DARK CURRENT DENSITY; GAS SOURCE MOLECULAR BEAM EPITAXY; GRADED SUPERLATTICE; METAL SEMICONDUCTOR METAL PHOTODETECTORS; SUBSTRATE GROWTH TEMPERATURE; VAN DER PAUW-HALL TECHNIQUE;

PHOTODETECTORS;

EID: 0030166257     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.502109     Document Type: Article

References (14)

1. H. Schumacher, H. P. Leblanc, J. Soole, and R. Bhat, "An investigation of the optoelectronic response of GaAs/InGaAs MSM photodetectors," IEEE Electron. Device Lett., vol. 9, pp. 607-609, 1988.
2. 0.53As MISIM photodetectors with dielectricassisted Schottky barriers," IEEE Electron. Device Lett., vol. 10, pp. 417-419, 1989.
3. 0.47As MSM photodetectors grown by OMCVD," IEEE Trans. Electron Devices, vol. 36, pp. 659-662, 1989.
4. D. Kuhl, F. Hieronymi, E. H. Bottcher, T. Wolf, A. Krost, and D. Bimberg, "Very high-speed metal-semiconductor-metal InGaAs:Fe photodetectors with InP:Fe barrier enhancement layer grown by low preasure metalorganic chemical vapor deposition," Electron. Lett., vvol. 26, pp. 2107-2108, 1990.
5. 0.47As," Electron. Lett., vol. 28, pp. 46-47, 1992.
6. 0.47 As MSM photodetectors grown by LP-MOVPE," IEEE Trans. Electron Devices, vol. 39, pp. 1028-1031, 1992.
7. 0.53As cap layer," Electron. Lett., vol. 28, pp. 992-993, 1992.
8. 3 interfacial layer," IEEE Photon. Technol. Lett., vol. 6, pp. 1213-1215, 1994.
9. J. H. Burroughes and M. Hargis, "1.3 m InGaAs MSM photodetector with abrupt InGaAs/AlInAs interface," IEEE Photon. Technol. Lett., vol. 3, pp. 532-534, 1991.
10. O. Wada, H. Nobuhara, H. Hamaguchi, T. Mikawa, A. Tackeuchi, and T. Fujji, "Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice," Appl. Phys. Lett., vol. 54, pp. 16-17, 1989.
11. 0.47As metal-semiconductor-metal photodetector," Appl. Phys. Lett., vol. 56, pp. 1067-1068, 1989.
12. E. Sano, M. Yoneyama, T. Enoki and T. Tamamura, "Performance dependence of InGaAs MSM photodetectors on barrier-enhancement layer," Electron. Lett., vol. 28, pp. 1220-1221, 1992.
13. J. H. Kim, H. T. Griem, R. A. Friedman, E. Y. Chan, and S. Ray, "High performance back-illminated InGaAs/InAlAs MSM photodetector with a record responsivity of 0.96 A/W," IEEE Photon. Technol. Lett., vol. 5, pp. 1241-1245, 1992.
14. T. Sasaki, T. Enoki, M. Tachikawa, M. Sugo, and H. Mori, "In-AlAs/InGaAs metal-semiconductor-metal photodiodes heteroepitaxially grown on Si substrates," Appl. Phys. Lett., vol. 64, pp. 751-753,1994.