Effect of rapid thermal annealing on the optical and structural properties of highly strained InAs/InP quantum well structures

Solid State Communications

Volumn 98, Issue 11, 1996, Pages 1009-1013

  Xing, Q J ^a   Brebner, J L ^b   Luo, X M ^b   Beaudoin, M ^b   Chennouf, A ^b   Ahmad, G ^b   Chen, C W ^b  

^a PEKING UNIVERSITY   (China)

^b ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

A. quantum wells; A. semiconductors; C. crystal structure; D. optical properties

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

SEMICONDUCTING INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030165998     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00163-9     Document Type: Article

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