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Surface Science

Volumn 356, Issue 1-3, 1996, Pages 68-74

Activated chemisorption of oxygen on Si(111)-2 x 1

(6) Goletti, C a Chiaradia, P a Moretti, L a Yian, W a,c Chiarotti, G a Selci, S b

a UNIVERSITY OF ROME TOR VERGATA (Italy)

b CNR (Italy)

c NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

Adsorption kinetics; Atom solid reactions; Chemisorption; Infrared absorption spectroscopy; Physical adsorption; Semiconducting surfaces; Silicon; Single crystal surfaces; Solid gas interfaces; Sticking

Indexed keywords

ABSORPTION SPECTROSCOPY; ACTIVATION ENERGY; ADSORPTION; DESORPTION; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); MATHEMATICAL MODELS; OXYGEN; REACTION KINETICS; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SURFACES;

ATOM SOLID REACTIONS; CLASSICAL LANGMUIR THEORY; INFRARED ABSORPTION SPECTROSCOPY; SEMICONDUCTING SURFACES; STICKING COEFFICIENT;

CHEMISORPTION;

EID: 0030165786 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(96)00013-1 Document Type: Article

Times cited : (10)

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