The investigation of custom grown vertical zone melt semi-insulating bulk gallium arsenide as a radiation spectrometer

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 2, 1996, Pages 1397-1406

  McGregor, D S ^a   Antolak, A J ^a   Chui, H C ^b   Cross, E S ^a   Fang, Z Q ⁱ   Flatley, J E ^e   Goorsky, M S ^d   Henry, R L ^g   James, R B ^a   Look, D C ⁱ   Mier, M G ^h   Morse, D H ^a   Nordquist, P E R ^g   Olsen, R W ^a   Pocha, M ^f   Schieber, M ^a   Schlesinger, T E ^c   Soria, E ^a   Toney, J E ^c   Van Scyoc, J ^c   Yoon, H ^d   Wang, C L ⁱ   more..

^a SANDIA NATIONAL LABORATORIES   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c CARNEGIE MELLON UNIVERSITY   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e Detectronix   (United States)

^f LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^g NAVAL RESEARCH LABORATORY   (United States)

^h WRIGHT PATTERSON AIR FORCE BASE   (United States)

ⁱ WRIGHT STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; FABRICATION; GAMMA RAY SPECTROMETERS; RADIATION DETECTORS; SPECTROSCOPY;

CHARGE COLLECTION EFFICIENCY; CRYSTAL MOSAIC; GAMMA RAY DETECTORS; VERTICAL ZONE MELT PROCESS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030165677     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.507073     Document Type: Article

References (18)

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