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Volumn 357-358, Issue , 1996, Pages 527-531

Surface structures of (NH4)2Sx-treated GaAs studied by S K-edge X-ray absorption fine structure

(3) Maeyama, S a Sugiyama, M a Oshima, M a

Author keywords

Gallium arsenide; Near edge extended X ray absorption fine structure (NEXAFS); Single crystal surfaces; Sulphides; Surface extended X ray absorption fine structure (SEXAFS); Surface structure, morphology, roughness, and topography

Indexed keywords

ADSORPTION; CALCULATIONS; CHEMICAL BONDS; MORPHOLOGY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SULFUR COMPOUNDS; SURFACE ROUGHNESS; SURFACES; SYNCHROTRON RADIATION; X RAY ANALYSIS;

NEAR EDGE EXTENDED X RAY ABSORPTION FINE STRUCTURE; SURFACE EXTENDED X RAY ABSORPTION FINE STRUCTURE; SURFACE TOPOGRAPHY; X RAY ABSORPTION FINE STRUCTURE; X RAY STANDING WAVE;

SURFACE STRUCTURE;

EID: 0030165302 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(96)00216-6 Document Type: Article

Times cited : (11)

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