Theory on STM images of an Si(001) surface with steps

Surface Science

Volumn 357-358, Issue , 1996, Pages 500-503

  Nakamura, Yoshimichi ^a   Kawai, Hiroshi ^a   Nakayama, Masatoshi ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Computer simulations; Ising models; Low index single crystal surfaces; Scanning tunneling microscopy; Silicon; Stepped single crystal surfaces; Surface relaxation and reconstruction

Indexed keywords

BOUNDARY CONDITIONS; BUCKLING; CALCULATIONS; COMPUTER SIMULATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON;

DIMERS; FIRST PRINCIPLES CALCULATIONS; ISING MODELS; KINK; LOW INDEX SINGLE CRYSTAL SURFACES; STEPPED SINGLE CRYSTAL SURFACES; SURFACE RECONSTRUCTION;

SURFACE STRUCTURE;

EID: 0030165240     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00210-5     Document Type: Article

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