Studies of thin films grown on InAs(111) and GaP(100) in HCl etches using X-ray diffraction methods

Materials Chemistry and Physics

Volumn 44, Issue 3, 1996, Pages 203-210

  Hsieh, H F ^a   Shih, H C ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

GaP; HCl etches; InAs; Oxides; X ray diffraction

Indexed keywords

ANODES; COMPOSITION; ETCHING; HYDROCHLORIC ACID; OXIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; SURFACE STRUCTURE; THIN FILMS;

COPPER ANODE X RAY SOURCE; GALLIUM PHOSPHIDE; GLANCING ANGLE DIFFRACTION; INDIUM ARSENIDE; WIDE ANGLE DIFFRACTION;

X RAY DIFFRACTION;

EID: 0030165202     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/0254-0584(96)80057-5     Document Type: Article

References (22)

1. J.S. Barrera and R.T. Archer, IEEE Trans. Electron Dev., ED-22 (1975) 1023.
2. H.H. Wieder, J. Vac. Sci. Technol., 17 (1980) 1009.
3. L. Messik, Solid-State Electron., 23 (1980) 551.
4. O.K. Kim, S.R. Forrest, W.A. Bonner and R.G. Smith, Appl. Phys. Lett., 39 (1981) 402.
5. L. Henry, D. Lecrosnier, H.L. Haridon, J. Paugam, G. Pelous, F. Richou and M. Salvi, Electron. Lett., 18 (1982) 102.
6. J.C. Campbell and K. Ogawa, J. Appl. Phys., 53 (1982) 1203.
7. S.M. Spitzer, B. Schwartz and M. Kuhn, J. Electrochem. Soc., 120 (1973) 669.
8. T. Ikoma and H. Yokomizo, IEEE Trans. Electron. Dev., ED-23 (1976) 521.
9. H. Terao, T. Ito and Y. Saki, Electr. Eng. Jpn., 94 (1974) 127.
10. C.W. Wilmsen, L.G. Meiners and D.A. Collins, Thin Solid Films, 46 (1917) 331.
11. D.A. Baglee, D.K. Ferry, C.W. Wilmsen and H.H. Wieder, J. Vac. Sci. Technol., 17 (1980) 1032.
12. D.A. Baglee, D.H. Laughlin, C.W. Wilmsen and D.K. Ferry, The Physics of MOS Insulators, Pergamon Press, New York, 1980.
13. J.M. Poate, P.J. Silverman and J. Yahalom, J. Phys. Chem. Solids, 34 (1973) 1847.
14. J.M. Poate, P.J. Silverman and J. Yahalom, J. Electrochem. Soc., 120 (1973) 844.
15. H.J. Bilz, G. Leonhardt, G. Kunn, K. Loschke and A. Meisel, Krist. Tech., 13 (1978) 363.
16. H.F. Hsieh and H.C. Shih, J. Appl. Phys., 66 (8) (1989) 3542.
17. H.F. Hsieh and H.C. Shih, J. Electrochem. Soc., 138 (7) (1991) 1965.
18. B.K. Vainshtein, Modern Crystallography I, Springer-Verlag, Berlin, 1981.
19. K. Kamigaki, H. Terauchi, T. Terashima, Y. Bando, K. Lijima, K. Yamamoto, K. Hirata, K. Hayashi, I. Nakagawa and Y. Tomii, J. Appl. Phys., 69 (6) (1991) 3653.
20. H.F. Hsieh and H.C. Shih, J. Electrochem. Soc., 137 (5) (1990) 1348.
21. H.F. Hsieh, C.C. Yeh and H.C. Shih, J. Electrochem. Soc., 140 (2) (1993) 470.
22. H.F. Hsieh, C.C. Yeh and H.C. Shih, J. Electrochem. Soc., 139 (7) (1992) 1897.