Kinetics of initial oxidation of the Si(111)-7 × 7 surface near the critical conditions

Surface Science

Volumn 357-358, Issue , 1996, Pages 729-732

  Shklyaev, A A ^a,b   Suzuki, Takanori ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Adhesion; Chemisorption; Etching; Oxidation; Oxygen; Second harmonic generation; Silicon; Surface chemical reaction

Indexed keywords

CHEMISORPTION; CRYSTAL GROWTH; ETCHING; NUCLEATION; OXIDATION; OXIDES; PRESSURE EFFECTS; REACTION KINETICS; SECOND HARMONIC GENERATION; SEMICONDUCTING SILICON; SURFACE PROPERTIES; TEMPERATURE;

INITIAL OXIDATION; INITIAL REACTIVE STICKING COEFFICIENT; OXIDE GROWTH; OXIDE NUCLEATION; REACTION RATE CONSTANTS; SILICON SURFACE; SURFACE TEMPERATURES;

SURFACE PHENOMENA;

EID: 0030164717     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00254-3     Document Type: Article

References (20)

1. J.J. Lander and J. Morrison, J. Appl. Phys. 33 (1962) 2089.
2. F.W. Smith and G. Ghidini, J. Electrochem. Soc. 129 (1982) 1300.
3. M.R. Baklanov, V.N. Kruchinin, S.M. Repinsky and A.A. Shklyaev, React. Solids 7 (1989) 1.
4. A. Feltz, U. Memmert and R.J. Behm, Surf. Sci. 314 (1994) 34.
5. J. Seiple, J. Pecquet, Z. Meng and J.P. Pelz, J. Vac. Sci. Technol. A 11 (1993) 1649.
6. A.A. Shklyaev and T. Suzuki, Phys. Rev. Lett. 75 (1995) 272.
7. T. Suzuki and Y. Hirabayashi, Jpn. J. Appl. Phys. 32 (1993) L610.
8. T.F. Heinz, M.M.T. Loy and W.A. Thompson, J. Vac. Sci. Technol. B 3 (1985) 1467.
9. Y.R. Shen, Nature 337 (1989) 519.
10. P. Gupta, C.H. Mak, P.A. Coon and S.M. George, Phys. Rev. B 40 (1989) 7739, and references cited therein.
11. R.E. Walkup and S.I. Raider, Appl. Phys. Lett. 53 (1988) 888.
12. J.R. Engstrom, D.J. Bonser, M.M. Nelson and T. Engel, Surf. Sci. 256 (1991) 317.
13. D.A. King and M.G. Wells, Proc. R. Soc. London, Ser. A 339 (1974) 245.
14. A.J. Schell-Sorokin and J.E. Demuth, Surf. Sci. 157 (1985) 273.
15. U. Höfer, P. Morgen, W. Wurth and E. Umbach, Phys. Rev. Lett. 55 (1985) 2979.
16. K. Edamoto, Y. Kubota, H. Kobayashi, M. Onchi and M. Nishijima, J. Chem. Phys. 83 (1985) 428.
17. B. Schubert, Ph. Avouris and R. Hoffman, J. Chem. Phys. 98 (1993) 7593.
18. A.A. Shklyaev and T. Suzuki, Surf. Sci. to be published.
19. tr were shifted by ∼30°C in Fig. 4 because of the different calibration of absolute temperature: the temperature of the 7×7↔1×1 phase transition was observed at 860°C in Refs. [6,7], and at 830°C in the present work by the infrared pyrometer.
20. J.V. Seiple and J.P. Pelz, Phys. Rev. Lett. 73 (1994) 999.