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Volumn 43, Issue 3 PART 2, 1996, Pages 1452-1457
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Sensitivity measurements of thick amorphous-silicon p-i-n nuclear detectors
a a,b a b |
Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
AMORPHOUS SILICON;
CHARGED PARTICLES;
CHEMICAL VAPOR DEPOSITION;
EFFICIENCY;
ELECTRIC PROPERTIES;
ELECTRON TRANSPORT PROPERTIES;
LEAKAGE CURRENTS;
SEMICONDUCTOR DIODES;
SENSITIVITY ANALYSIS;
SPECTRUM ANALYSIS;
X RAYS;
BIAS VOLTAGES;
NUCLEAR DETECTORS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
REVERSE CURRENT;
SENSITIVITY MEASUREMENTS;
TIME OF FLIGHT;
RADIATION COUNTERS;
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EID: 0030164340
PISSN: 00189499
EISSN: None
Source Type: Journal
DOI: 10.1109/23.507082 Document Type: Article |
Times cited : (4)
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References (21)
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