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Volumn 43, Issue 3 PART 2, 1996, Pages 1452-1457

Sensitivity measurements of thick amorphous-silicon p-i-n nuclear detectors

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; CHARGED PARTICLES; CHEMICAL VAPOR DEPOSITION; EFFICIENCY; ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; LEAKAGE CURRENTS; SEMICONDUCTOR DIODES; SENSITIVITY ANALYSIS; SPECTRUM ANALYSIS; X RAYS;

EID: 0030164340     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.507082     Document Type: Article
Times cited : (4)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.