Efficiency of non-uniformly irradiated double-sided silicon strip detectors

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 2, 1996, Pages 1142-1145

  Dubbs, T ^a   Kashigin, S ^a   Kratzer, M ^a   Kroeger, W ^a   Pulliam, T ^a   Sadrozinski, H F W ^a   Schwab, M ^a   Spencer, E ^a   Wichmann, R ^a   Wilder, M ^a   Unno, Y ^b   Ohsugi, T ^c  

^a UNIVERSITY OF CALIFORNIA SANTA CRUZ   (United States)

^b HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

^c HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; COLLIDING BEAM ACCELERATORS; COMPARATOR CIRCUITS; CYCLOTRONS; ION IMPLANTATION; IRRADIATION; PROTONS; READOUT SYSTEMS; SILICON SENSORS; SPURIOUS SIGNAL NOISE; TELESCOPES;

DEPLETION VOLTAGE; DOUBLE SIDED SILICON STRIP DETECTORS; MAXIMUM EQUIVALENT FLUENCE; NOISE OCCUPANCY; NON UNIFORM PROTON IRRADIATIONS; RUTHENIUM TELESCOPE;

PARTICLE DETECTORS;

EID: 0030164338     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.506652     Document Type: Article

References (16)

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