Field screening in (111)B InAsP/InP strained quantum wells

Journal of Electronic Materials

Volumn 25, Issue 6, 1996, Pages 1019-1022

  Hou, H Q ^a,b   Tu, C W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Field screening; Gas source molecular beam epitaxy (GSMBE); InAsP InP; InP (111)B substrate; Piezoelectric effect

Indexed keywords

CALCULATIONS; ELECTRIC FIELD EFFECTS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PIEZOELECTRICITY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING INTERMETALLICS;

ENERGY SHIFT; FIELD SCREENING; PIEZOELECTRIC EFFECTS; QUANTUM CONFINED STARK EFFECT; STRAINED QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030156802     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666739     Document Type: Article

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