Space charge analysis of Si n+-i structures with application to far-infrared detectors

Solid-State Electronics

Volumn 39, Issue 5, 1996, Pages 621-628

  Yuan, H X ^a   Perera, A G U ^a  

^a GEORGIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; ELECTRON ENERGY LEVELS; INFRARED DETECTORS; INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; NUMERICAL METHODS; PHOTOEMISSION; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING;

FAR INFRARED DETECTORS; FIVE ELECTRON CONCENTRATION; IONIZED DONOR CONCENTRATION; SILICON HOMOJUNCTION INTERFACIAL WORKFUNCTION INTERNAL PHOTOEMISSION;

SEMICONDUCTING SILICON;

EID: 0030151529     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00176-X     Document Type: Article

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