Determination of LDD MOSFET drain resistance from device simulation

Solid-State Electronics

Volumn 39, Issue 5, 1996, Pages 753-758

  Samudra, G S ^a   Seah, B P ^a   Ling, C H ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CALCULATIONS; COMPUTATIONAL METHODS; COMPUTER SIMULATION; ELECTRIC RESISTANCE; HOT CARRIERS; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SIMULATORS;

COMPUTATIONAL EFFICIENCY; DRAIN RESISTANCE; LDD MOSFET DEVICES; QUASI FERMI POTENTIALS; TWO DIMENSIONAL DEVICE SIMULATOR MEDICI;

MOSFET DEVICES;

EID: 0030151521     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00394-0     Document Type: Article

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