An amorphous silicon TFT with annular-shaped channel and reduced gate-source capacitance

IEEE Transactions on Electron Devices

Volumn 43, Issue 5, 1996, Pages 839-841

  Byun, Young Hee ^a   Boer, Willem Den ^a   Yang, Mohshi ^a   Gu, Tieer ^a  

^a Optical Imaging Systems Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CAPACITANCE; ELECTRIC CURRENTS; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MANUFACTURE;

ANNULAR SHAPED CHANNEL; GATE SOURCE CAPACITANCE;

THIN FILM TRANSISTORS;

EID: 0030151157     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.491263     Document Type: Article

References (8)

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