Improved model for the determination of strain fields and chemical composition of semiconductor heterostructures by high-resolution X-ray diffractometry

Solid State Communications

Volumn 98, Issue 7, 1996, Pages 599-603

  Tapfer, L ^a   De Caro, L ^a   Giannini, C ^a   Schonherr H P ^b   Ploog, K H ^b  

^a Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali   (Italy)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

A. semiconductors; C. X ray scattering; D. elasticity

Indexed keywords

APPROXIMATION THEORY; COMPOSITION; CRYSTAL LATTICES; DEFORMATION; ELASTICITY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; STRAIN; SURFACES; X RAY DIFFRACTION ANALYSIS;

CHEMICAL COMPOSITION; LATTICE MISMATCH; X RAY INCIDENCE PARAMETERS; X RAY SCATTERING;

HETEROJUNCTIONS;

EID: 0030150826     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00666-7     Document Type: Article

References (13)

1. W.J. Bartels & W. Nijman, J. Cryst. Growth 44, 518 (1978).
2. I.C. Bassignana & C.C. Tan, J. Appl. Cryst. 22, 269 (1989).
3. L. Tapfer, Physica Scripta T25, 45 (1989) (and references therein).
4. F.F. Fewster, Semicond. Sci. Technol. 8, 1915 (1993) (and references therein).
5. Yu.P. Khapachev & F.N. Chukhovskii, Sov. Phys. Crystallogr. 34, 465 (1989).
6. M. Servidori, F. Cembali, R. Fabbri and A. Zani, J. Appl. Cryst. 25, 46 (1992).
7. R. Zaus, J. Appl. Cryst. 26, 801 (1993).
8. C. Bocchi, C. Ferrari, P. Franzosi, A. Bosacchi & S. Franchi, J. Cryst. Growth 132, 427 (1993).
9. C. Giannini, L. De Caro and L. Tapfer, Solid State Commun. 91, 635 (1994).
10. W.J. Bartels, J. Hornstra & D.J.W. Lobeek, Acta Cryst. A42, 539 (1986).
11. M.A. Tagliente, L. De Caro, L. Tapfer, R. Nötzel, A Fischer & K. Ploog, Solid-State Electron. 37, 747 (1994).
12. L. De Caro & L. Tapfer, Phys. Rev. B48, 2298 (1993).
13. J.F. Nye, Physical Properties of Crystals. Oxford University Press, Oxford (1964).