Strong quantum confinement effects in semiconductors: FeS2 nanoclusters

Solid State Communications

Volumn 98, Issue 6, 1996, Pages 581-585

  Wilcoxon, J P ^a   Newcomer, P P ^a   Samara, G A ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

A. semiconductors

Indexed keywords

ENERGY GAP; IONS; LIGHT ABSORPTION; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SYNTHESIS (CHEMICAL);

IRON DISULFIDE; NANOCLUSTERS; QUANTUM CONFINEMENT EFFECTS;

IRON COMPOUNDS;

EID: 0030150760     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(95)00822-5     Document Type: Article

References (9)

1. See A.D. Yoffe, Adv. Phys. 42, 173 (1993) for a recent view and references therein.
2. A. Martino, J.P. Wilcoxon & J. Kawola, Energy and Fuels xx, 1289 (1994).
3. W. Folkerts, G.A. Sawatzky, C. Haas, R.A. deGroot & F.V. Hillebrecht, J. Phys. C: Solid State Phys. 20, 4135 (1987) (and references therein).
4. J.P. Wilcoxon, U.S. Patent #5,147,841, issued Sept. 15 (1992).
5. K. Sato, J. Phys. Soc. Jpn. 53, 1617 (1984).
6. J.B. Goodenough, J. Solid State Chem. 3, 26 (1971).
7. D.W. Bullett, J. Phys. C: Solid State Phys. 15, 6163 (1982).
8. W.W. Kou & M.S. Sheehra, Phys. Rev. B18, 7062 (1978).
9. J.P. Wilcoxon & G.A. Samara, Phys. Rev. B51, 7299 (1995).