A traveling fringes photodetector for microwave signals

IEEE Journal of Quantum Electronics

Volumn 32, Issue 5, 1996, Pages 778-783

  Merlet, Thomas ^b,c,d   Dolfi, Daniel ^b,d,e,f   Huignard, Jean Pierre ^a,b,f,g  

^a IEEE

^b THALES   (France)

^c PSL RESEARCH UNIVERSITY   (France)

^d UNIVERSITÉ PARIS SACLAY   (France)

^e Ecole Superieure d'Optique   (France)

^f University of Paris XI ^*

^g INSTITUT D'OPTIQUE GRADUATE SCHOOL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; ELECTRIC FIELDS; ELECTRODES; ELECTRONS; MATHEMATICAL MODELS; MICROWAVES; OHMIC CONTACTS; PHOTOCONDUCTING MATERIALS; PHOTODIODES; RESONANCE; SEMICONDUCTING GALLIUM ARSENIDE;

MICROWAVE SIGNALS; OPTICAL GENERATION; PHOTOGENERATED CARRIERS; TRAVELLING FRINGES PHOTODETECTOR;

PHOTODETECTORS;

EID: 0030150497     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.493000     Document Type: Article

References (21)

1. B. M. Hendrickson, Ed., "Optoelectronic signal processing for phased array antenna," Proc. SPIE, vol. 2155, 1994.
2. M. Dentan and B. de Crémoux, "Numerical simulation of the nonlinear response of a p-i-n photodiode under high illumination," IEEE J. Lightwave Technol., vol. 8, pp. 1137-1144, 1990.
3. R. R. Hayes and D. L. Persechini, "Nonlinearity of p-i-n photodetectors," IEEE Photon. Technol. Lett., vol. 5, pp. 70-72, 1993.
4. K. J. Williams, R. D. Esman, and M. Dagenais, "Effects of high space-charge fields on the response of microwave photodetectors," IEEE Photon. Techno. Lett., vol. 6, pp. 639-641, 1994.
5. K. S. Giboney, M. J. W. Rodwell, and J. E. Bowers, "Traveling wave photodetectors," IEEE Photon. Technol. Lett., vol. 4, pp. 1363-1365, 1992.
6. A. R. Williams, A. L. Kellner, X. S. Jiang, and P. K. L. Yu, "InGaAS/InP waveguide photodetector with high saturation intensity," Electron. Lett., vol. 28, pp. 2258-2261, 1992, and "Dynamic range performance of a high speed, high saturation InGaAs/InP pin waveguide photodetector," Electron. Lett., vol. 31, pp. 548-549, 1995.
7. A. R. Williams, A. L. Kellner, X. S. Jiang, and P. K. L. Yu, "InGaAS/InP waveguide photodetector with high saturation intensity," Electron. Lett., vol. 28, pp. 2258-2261, 1992, and "Dynamic range performance of a high speed, high saturation InGaAs/InP pin waveguide photodetector," Electron. Lett., vol. 31, pp. 548-549, 1995.
8. E. Greger et al., "Reverse biased photoconductive detectors and switches with separate absorption and detection area," Appl. Phys. Lett., vol. 66, pp. 1367-1369, 1995.
9. D. Dolfi, Th. Merlet, A. Mestreau, and J.-P. Huignard, "A photodetector for microwave signals based on the synchronous drift of photogenerated carriers with a moving interference pattern," Appl. Phys. Lett., vol. 65, pp. 2931-2933, 1994.
10. M. Di Domenico and O. Svelto, "Solid-state photodetection: A comparison between photodiodes and photoconductors," Proc. IEEE, pp. 134-144, 1964.
11. M. P. Petrov, I. A. Sokolov, S. I. Stepanov, and G. S. Trofimov, "Non-steady-state photo-electromotive-force induced by dynamic gratings in partially compensated photoconductors," J. Appl. Phys., vol. 68, pp. 2216-2225, 1990.
12. I. A. Sokolov and S. I. Stepanov, "Non-steady-state photo-electromotive-force in crystals with long carrier lifetime," J. Opt. Soc. Amer., vol. B 10, pp. 1483-1488, 1993.
13. N. Korneev, S. Mansurova, and S. Stepanov, "Non-steady-state photo-electromotive-force in bipolar photoconductors with arbitrary level structure," J. Opt. Soc. Amer., vol. B 12, pp. 615-620, 1995.
14. A. G. Kostenbauder, S. J. B. Yoo, and A. E. Siegman, "A fast diffusion driven photodetector: Theory and experiments," IEEE J. Quantum Electron., vol. 24, pp. 240-244, 1988.
15. U. Haken, M. Hundhausen, and L. Ley, "Moving grating technique: A new method for the determination of electron and hole mobilities and their lifetime," Appl. Phys. Lett., vol. 63, pp. 3066-3068, 1993.
16. A. Grunnet-Jepsen, I. Aubrechjt, and L. Solymar, "High frequency resonances in photorefractive crystals," Opt. Lett., vol. 20, pp. 819-821, 1995.
17. H. Merkelo et al., "Semiconductor optoelectronic devices based on interference-induced carrier modulation," IEEE J. Quantum Electron., vol. 24, pp. 245-254, 1988.
18. W. M. Bullis, "Properties of gold in silicon," Solid-State Electron., vol. 9, pp. 143-168, 1966.
19. H. Morkoç et al., "Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies," J. Appl. Phys., vol. 76, pp. 1363-1398, 1994.
20. W. A. Beck, "Photoconductive gain and generation-recombination noise in MQW infrared detectors," Appl. Phys. Lett., vol. 63, pp. 3589-3591, 1993.
21. S. M. Szè, Physics of Semiconductor Devices. New York: Wiley, 1981, p. 46.